[물리학과 세미나]

제목 : Atomically Thin 2D Semiconductor Electronics toward Beyond-CMOS Technology

연사 : 서울대학교 이철호 교수

장소 : 대면 (자연과학대학4호관 114호 세미나실)

일시 : 2024년 1월 22일 (월) 17:00~

문의 : 양자제어물성연구소로 연락바람 (821-6261)

초록 : 

Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as promising materials for advancing beyond-CMOS electronics primarily due to their remarkable gate coupling capabilities and resistance to short channel effects. Moreover, their van der Waals (vdW) layered structure makes them highly suitable for non-conventional electronics, enabling heterogeneous integration and deformability. To achieve high-performance 2D semiconductor devices, precise control over the electronic states and energy band profiles at heterointerfaces is crucial. The interactions between the semiconductor channel, gate dielectric, and metal electrodes play a significant role in determining device performance. Effective manipulation of these interfaces is essential for optimizing device characteristics. In this talk, I will present two types of proof-of-concepts 2D FETs enabled by interface band engineering: 1) modulation-doped FETs (MODFETs) and 2) metal-semiconductor FETs (MESFETs). In a MODFET, we demonstrated remote modulation doping in the type-II bandmodulated channel, enabling us to achieve high mobility by suppressing dopant-induced charge impurity scattering. The 2D MESFETs were also demonstrated using the Fermilevel pinning-free metal Schottky gate, whose device characteristics approach the Boltzmann switching limit.